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SWIR
검사시스템
(SWIR INPECTION SYSTEM)
InGaAs short wave infrared (SWIR) inspection
system deliver 640x512 resolution
with extended dynamic range response up to 2.2 micron. The high resolution SWIR system can be used for a very wide variety of
applications including laser beam profiling, semiconductor inspection,
hyperspectral imaging, on-line process control, Low-light level imaging, and
screening solar cells.
Example: For solar cells screening, defects at early
processing stage can be imaged through the bulk silicon thanks to its
transparency at wavelengths beyond 1.1 micron.
Cracks, dead or weak
responding areas are unveiled on sliced wafers, enabling automatic sorting /
selection of the best pieces.
The system finally captures faint
electroluminescence (EL) and photoluminescence (PL) emissions from individual
photovoltaic cells that are directly proportional to their efficiency.
high resolution SWIR Inspection systems are supplied with state of art SWIR optics which
will deliver superior resolution / contrast modulation and lower distortion than
conventional NIR optics that are used with conventional CCD cameras.
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적용분야
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솔라셀 검사 (Solar cell inspection)
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솔라셀용 실리콘웨이퍼 검사 (Bare solar
cell silicon wafer inspection)
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반도체 검사 (Semiconductor inspection)
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자외선 천문학 분야 (Astronomy)
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건조로 / 소성로 온도 모니터링 (Temperature
furnace monitoring)
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산업용 열상 이미지 검사 (Industrial
thermal imaging)
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스펙트로스코피 이미징 (Imaging spectroscopy)
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피부의료분야의 이미징 (Dermatologic
imaging)
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적외선 마이크로스코피 (Thick sample
/ tissue IR microscopy)
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레이저 프로파일링 (Laser profiling /
telecom)
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Low light level / range gated IR imaging
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특징
및 장점 (ADVANTAGES)
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Cooled sensors with 45 and 70 degrees
C delta T, includes hermetically
sealed package
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10Mhz scanning frequencies
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Dynamic range > 1000:1
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Low dark current with less than 0.4
pA
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Gating time from milliseconds to >
500ns to 1 second
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Pixel operability: > 99.5%
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Simultaneous integration / readout enabling
100% duty cycle acquisition
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Non destructive read out
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Spectral range from 0.9 to 1.7 micron
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Video CCIR and GigE digital interface
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Air cooled / water cooled option
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Synchronisation / control : via TTL
pulse
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Integrated Non Uniformity Correction,
bright pixel, flat field and offset
corrections
| 기술
사양 (SPECIFICATIONS)
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SWIR
LR |
SWIR
HR
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320 (h) x 256 (v) InGaAs
array |
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640 (h) x 512 (v) InGaAs
array
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Input pixel size : 30 x
30 microns
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Input pixel size : 25 x
25 microns
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Input size : 9.6 x 7.68
mm
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Input size: 16 x 12.8 mm
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25 fps at full resolution
@ 10 MHz
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25 fps at full resolution
@ 10 MHz
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Responsitivity in low gain
mode: 0.7mV / electron
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Responsitivity in low gain
mode: 1.2mV / electron
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Responsitivity in high gain
mode: 13.3mV / electron
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Responsitivity in high gain
mode: 31mV / electron
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Readout noise : 120 - 150
electrons @ 10 MHz
with
interpolation noise reduction
in high gain
mode,
380 electrons in low gain
mode
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Readout noise : 120 - 150
electrons @ 10 MHz with
interpolation noise reduction
in high gain mode,
380 electrons in low gain
mode
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Full well capacity : 150,000
electrons in high
gain
mode; 3,000,000 electrons
in in low gain
mode
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Full well capacity : 200,000
electrons in high gain mode;
3,500,000 electrons in low
gain mode
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Sensitivity: 10^10 Jones
with 33ms integration
time
@ 1550 nm
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Sensitivity: 10^10 Jones
with 33ms integration time
@ 1550 nm
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16-bit extended dynamic
range
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16-bit extended dynamic
range
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Peak QE: >70% @1100nm,
> 65% from 1000
to
1600 nm
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Peak QE: >70%
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Extended QE version up to
2.2 micron available
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상기 사양은 제품의 성능향상 및 개량을 위하여 변경될 수 있으며, 요청사양은 적용분야에 따라 당사 기술팀과 협의 후 추가 설치 가능하므로, 시스템에 대한 상세한 사양은 당사 영업팀과 상세하게 협의하시기 바랍니다.
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